This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in …
When Courant prepared the text of his 1942 address to the American Mathematical Society for publication, he added a two-page Appendix to illustrate how the variational methods first described by Lord Rayleigh could be put to wider use in potential theory. Choosing piecewise-linear approximants on a set of triangles which he called elements, he dashed off a couple of two-dimensional examples and…